The Photonics Materials program comprises new materials with important and unique value to photonics:
- development of AlGaAs-InAs high electron mobility transistors, AlGaN UV emmitters, and integrated InP-based heterojunction bipolar transistors;
- investigation of MOS dielectrics materials, and generation of static and dynamic MOS integrated circuits;
- development of system-level test methods for mixed-signal and RF circuits, computer-aided-analysis of high-level and transistor-level circuits, and device modeling;
- translational research on third-generation liquid crystal on silicon digital projection light systems